c opyright ruichips semiconductor co . , ltd rev . a C dec ., 2011 www. ruichips .com ru 602b p - channel advanced power mosfet mosfet features pin description applications symbol parameter rating unit common ratings ( t a =25 c unless otherwise noted) v dss drain - source voltage 60 v gss gate - source voltage 25 v t j maximum junction temperature 1 50 c t stg storage temperature range - 55 to 1 50 c i s diode continuous forward current t a =25 c 1.1 a mounted on l arge heat sink i d p 300 s pulse drain current tested t a =25 c 6 a t a =25 c 1.5 i d continuous drain current ( v gs =10 v) t a = 7 0 c 1. 2 a t a =25 c 1 p d maximum power dissipation t a = 7 0 c 0.64 w r q j a thermal resistance - junction to ambient 1 25 c /w ? 6 0 v/ 1.5 a, r ds ( on ) = 220m w (typ. ) @ v gs = 10 v ? low r ds (on) ? super high dense cell design ? reliable and rugged ? lead free and green available ? dc/dc converter ? battery switch abso lute maximum ratings sot - 23 n - channel mosfe t
c op yright ruichips semiconductor co . , ltd rev . a C dec ., 2011 2 www. ruichips .com ru 602b electrical characteristics ( t a =25 c unless otherwise noted) r u 602b symbol parameter test condition min. typ. max. unit static characteristics bv dss drain - sourc e breakdown voltage v gs =0v, i ds =250 m a 60 v v ds = 60 v, v gs =0v 1 i dss zero gate voltage drain current t j =85 c 30 m a v gs ( th) gate threshold voltage v ds =v gs , i ds =250 m a 2 3 4 v i gss gate leakage current v gs = 25 v, v ds =0v 1 0 0 n a r ds ( on ) drain - source on - state resistance v gs = 10 v, i ds = 1 a 220 250 m w notes : pulse width limited by safe operating area. when mounted on 1 inch square copper boa rd , t 10sec . the value in any given application depends on the user's specific board design. pulse test ; p ulse width 3 00 m s, duty cycle 2% . guaranteed by design, not subject to production testing . d iode characteristics v sd diode forward voltage i sd = 1 a, v gs =0v 1 .2 v t rr reverse recovery time 23 ns q rr reverse recovery charge i sd = 1 a, dl sd /dt=100a/ m s 17 nc dynamic characteri stics r g gate resistance v gs = 0 v,v ds =0v ,f=1mhz 1 . 5 w c iss input capacitance 19 5 c oss output capacitance 26 c rss reverse transfer capacitance v gs =0v, v ds = 3 0 v, frequency=1.0mhz 14 pf t d ( on ) turn - on delay time 8 t r turn - on rise time 1 1 t d ( off ) turn - off delay time 18 t f turn - off fall time v dd = 3 0 v, r l = 30 w , i ds = 1 a, v gen = 10 v, r g = 1 w 7 ns gate charge characteristics q g total gate charge 6.5 q gs gate - source charge 1. 3 q gd gate - drain charge v ds = 48 v, v gs = 10 v, i ds = 1 a 2 . 3 nc
c op yright ruichips semiconductor co . , ltd rev . a C dec ., 2011 3 www. ruichips .com ru 602b typical characteristics power dissipation drain current p tot - power ( w) i d - drain current (a) t j - junction temperature ( c) t j - junction temperature ( c) safe operation area thermal transient impedance i d - drain current (a) normalized effective transient v ds - drain - source voltage (v) square wave pulse duration ( sec)
c op yright ruichips semiconductor co . , ltd rev . a C dec ., 2011 4 www. ruichips .com ru 602b typical characteristics output characteristics drain - source on resistance i d - drain current (a) r ds(on) - on resistance ( m ) v ds - drain - source voltage (v) i d - drain current (a) drain - source on resistance gate threshold voltage r ds ( on ) - on - resistance (m ? ) normalized threshold voltage v gs - gate - source voltage (v) t j - junction temperature (c)
c op yright ruichips semiconductor co . , ltd rev . a C dec ., 2011 5 www. ruichips .com ru 602b typical characteristics drain - source on resistance source - drai n diode forward normalized on resistance i s - source current (a) t j - junction temperature (c) v sd - source - drain voltage (v) capacitance gate charge c - capacitance ( pf ) v gs - gat e - source voltage (v) v ds - drain - source voltage (v) q g - gate charge (nc)
c op yright ruichips semiconductor co . , ltd rev . a C dec ., 2011 6 www. ruichips .com ru 602b avalanche test circuit and waveforms switching time test circuit and waveforms
c op yright ruichips semiconductor co . , ltd rev . a C dec ., 2011 7 www. ruichips .com ru 602b ordering a nd marking information device marking package packaging quantity reel size tape width ru 602b 3x yww sot - 23 tape&reel 3000 7 8mm the following characters could be different and means: x =assembly site code y =year ww =work week
c op yright ruichips semiconductor co . , ltd rev . a C dec ., 2011 8 www. ruichips .com ru 602b package information sot - 23 all dimensions refer to jedec standard do not include mold flash or protrusions mm inch mm inch symbol min max min max symbol min max min max a 0.900 1.150 0.035 0.045 e1 2.250 2.550 0.089 0.100 a1 0.000 0.100 0.000 0.004 e 0.950 typ. 0.037 typ. a2 0.900 1.05 0 0.035 0.041 e1 1.800 2.000 0.071 0.079 b 0.300 0.500 0.012 0.020 l 0.550 ref. 0.022 ref. c 0.080 0.150 0.003 0.006 l1 0.300 0.500 0.012 0.020 d 2.800 3.000 0.110 0.118 0 8 0 8 e 1.200 1.400 0.047 0.055
c op yright ruichips semiconductor co . , ltd rev . a C dec ., 2011 9 www. ruichips .com ru 602b customer service worldwide sales and service : sales@ru i chips.com technical s upport : technical@ruichips.com investor relations contacts : investor@ruichips.com marcom contact: marcom@ruichips.com editorial contact : editorial@ruichips.com hr conta c t: hr@ruichips. com legal co ntact: legal@ruichips.com shen zhen ruichips semiconductor co., ltd room 501, the 5floor an tong industrial bui l ding, n o.207 mei hua road fu tian area shen zhen city , chi na tel: ( 86 - 755) 8311 - 5334 f ax : ( 86 - 755) 8311 - 4278 e - mail: sales - sz@ruichips.com
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